MBR10L60CT, MBRF10L60CT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
60
V
Average Rectified Forward Current (Per Leg)
(Rated VR) TC
=
140°C (Per Device)
IF(AV)
5
10
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
200
A
Operating Junction Temperature (Note 1)
TJ
?55 to +150
°C
Storage Temperature
Tstg
?65 to +175
°C
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
MBR10L60CT Junction?to?Case
Junction?to?Ambient
MBRF10L60CT Junction?to?Case
Junction?to?Ambient
RJC
RJA
RJC
RJA
2.8
70
5.7
75
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 5 A, T
C
= 25
°C)
(IF
= 5 A, T
C
= 125
°C)
(IF
= 10 A, T
C
= 25
°C)
(IF
= 10 A, T
C
= 125
°C)
vF
0.49
0.43
0.60
0.53
0.57
0.49
0.66
0.61
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 25
°C)
(Rated DC Voltage, TC
= 125
°C)
iR
77
33
220
60
A
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
Package Type
Shipping
MBR10L60CTG
TO?220AB
(Pb?Free)
50 Units / Rail
MBRF10L60CTG
TO?220FP
(Pb?Free)
50 Units / Rail
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